Influence of annealing and sputtering ambience on the photoluminescence of silicon nitride thin films

• Published in: Guang pu xue yu guang pu fen xi Vol. 28; no. 11; p. 2494
• Main Authors: Jia, Xiao-Yun, Xu, Zheng, Zhao, Su-Ling, Zhang, Fu-Jun, Zhao, De-Wei, Tang, Yu, Li, Yuan, Zhou, Chun-Lan, Wang, Wen-Jing
• Format: Journal Article
• Language: Chinese
• Published: China 01.11.2008

The radio frequency (r. f.) magnetron sputtering was used for preparing silicon-rich silicon nitride films deposited on polished Si substrates at 80 degrees C substrate temperature. The high-purity Ar was used as a sputtering gas and the high-purity N2 as a reactive gas. The silicon nitride films wi...