InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film

• Published in: Optics express Vol. 18 Suppl 4; p. A562
• Main Authors: Sheu, Jinn-Kong, Chang, Kuo-Hua, Tu, Shang-Ju, Lee, Ming-Lun, Yang, Chih-Ciao, Hsu, Che-Kang, Lai, Wei-Chih
• Format: Journal Article
• Language: English
• Published: United States 08.11.2010

In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO₂ mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery o...