APA (7th ed.) Citation

Sheu, J., Chang, K., Tu, S., Lee, M., Yang, C., Hsu, C., & Lai, W. (2010). InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film. Optics express, 18 Suppl 4, A562. https://doi.org/10.1364/OE.18.00A562

Chicago Style (17th ed.) Citation

Sheu, Jinn-Kong, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai. "InGaN Light-emitting Diodes with Oblique Sidewall Facets Formed by Selective Growth on SiO₂ Patterned GaN Film." Optics Express 18 Suppl 4 (2010): A562. https://doi.org/10.1364/OE.18.00A562.

MLA (9th ed.) Citation

Sheu, Jinn-Kong, et al. "InGaN Light-emitting Diodes with Oblique Sidewall Facets Formed by Selective Growth on SiO₂ Patterned GaN Film." Optics Express, vol. 18 Suppl 4, 2010, p. A562, https://doi.org/10.1364/OE.18.00A562.