Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2
Due to their interesting optical and electronic properties, silicon nanocrystals (Si NCs) are the subject of intense research activity. The definition of their electronic structure is not trivial, neither from a theoretical nor from an experimental point of view. In fact, the models and methodologie...
Saved in:
Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 6; no. 1; pp. 119 - 126 |
---|---|
Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
01.01.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Due to their interesting optical and electronic properties, silicon nanocrystals (Si NCs) are the subject of intense research activity. The definition of their electronic structure is not trivial, neither from a theoretical nor from an experimental point of view. In fact, the models and methodologies developed for bulk materials cannot be directly applied to study these nanostructures where size-related effects, like quantum confinement (QC) and surface related phenomena, play a major role. In this work, X-ray Photoelectron Spectroscopy (XPS) was used to study the electronic structure of Si NCs embedded in SiO
2
. The energy differences among Si
0+
2s and Si
0+
2p core levels and the valence band maximum (VBM) were monitored. XPS data were combined with a direct measurement of the energy band gap by photoluminescence analysis, providing a complete picture of the electronic structure of Si NCs as a function of their size. Experimental data indicate a progressive reduction of energy differences among core levels and the VBM when decreasing the average diameter of the Si NCs. No concomitant shift of the conduction band minimum (CBM) was observed. The electronic structure of P-doped Si NCs was investigated as well, showing a concurrent shift of the VBM and the CBM as a function of P concentration.
Conduction and valence band maxima in Si nanocrystals (
d
= 4.2 ± 0.9 nm) embedded in SiO
2
as a function of P concentration. |
---|---|
AbstractList | Due to their interesting optical and electronic properties, silicon nanocrystals (Si NCs) are the subject of intense research activity. The definition of their electronic structure is not trivial, neither from a theoretical nor from an experimental point of view. In fact, the models and methodologies developed for bulk materials cannot be directly applied to study these nanostructures where size-related effects, like quantum confinement (QC) and surface related phenomena, play a major role. In this work, X-ray Photoelectron Spectroscopy (XPS) was used to study the electronic structure of Si NCs embedded in SiO2. The energy differences among Si0+ 2s and Si0+ 2p core levels and the valence band maximum (VBM) were monitored. XPS data were combined with a direct measurement of the energy band gap by photoluminescence analysis, providing a complete picture of the electronic structure of Si NCs as a function of their size. Experimental data indicate a progressive reduction of energy differences among core levels and the VBM when decreasing the average diameter of the Si NCs. No concomitant shift of the conduction band minimum (CBM) was observed. The electronic structure of P-doped Si NCs was investigated as well, showing a concurrent shift of the VBM and the CBM as a function of P concentration. Due to their interesting optical and electronic properties, silicon nanocrystals (Si NCs) are the subject of intense research activity. The definition of their electronic structure is not trivial, neither from a theoretical nor from an experimental point of view. In fact, the models and methodologies developed for bulk materials cannot be directly applied to study these nanostructures where size-related effects, like quantum confinement (QC) and surface related phenomena, play a major role. In this work, X-ray Photoelectron Spectroscopy (XPS) was used to study the electronic structure of Si NCs embedded in SiO 2 . The energy differences among Si 0+ 2s and Si 0+ 2p core levels and the valence band maximum (VBM) were monitored. XPS data were combined with a direct measurement of the energy band gap by photoluminescence analysis, providing a complete picture of the electronic structure of Si NCs as a function of their size. Experimental data indicate a progressive reduction of energy differences among core levels and the VBM when decreasing the average diameter of the Si NCs. No concomitant shift of the conduction band minimum (CBM) was observed. The electronic structure of P-doped Si NCs was investigated as well, showing a concurrent shift of the VBM and the CBM as a function of P concentration. Conduction and valence band maxima in Si nanocrystals ( d = 4.2 ± 0.9 nm) embedded in SiO 2 as a function of P concentration. |
Author | Seguini, G Martella, C Lamperti, A Scuderi, M De Salvador, D Nicotra, G Spinella, C Napolitani, E Arduca, E Perego, M |
AuthorAffiliation | Universita degli Studi di Padova and MATIS IMM-CNR Laboratorio MDM IMM-CNR ISC-CNR Dipartimento di Fisica e Astronomia |
AuthorAffiliation_xml | – name: Dipartimento di Fisica e Astronomia – name: Laboratorio MDM – name: IMM-CNR – name: ISC-CNR – name: Universita degli Studi di Padova and MATIS IMM-CNR |
Author_xml | – sequence: 1 givenname: E surname: Arduca fullname: Arduca, E – sequence: 2 givenname: G surname: Seguini fullname: Seguini, G – sequence: 3 givenname: C surname: Martella fullname: Martella, C – sequence: 4 givenname: A surname: Lamperti fullname: Lamperti, A – sequence: 5 givenname: E surname: Napolitani fullname: Napolitani, E – sequence: 6 givenname: D surname: De Salvador fullname: De Salvador, D – sequence: 7 givenname: G surname: Nicotra fullname: Nicotra, G – sequence: 8 givenname: M surname: Scuderi fullname: Scuderi, M – sequence: 9 givenname: C surname: Spinella fullname: Spinella, C – sequence: 10 givenname: M surname: Perego fullname: Perego, M |
BookMark | eNpFkMtLAzEQxoMoWGsv3oWA59XZvHb3KKU-oFDxcV6ykyxsbZM1yR763xup6FzmY34f87ogp847S8hVCbcl8OYOq4QgKs4-T8iMgYSiklyc_mmmzskixi3kqEtVq2ZGXlc7iyl4NyDttDM0pjBhmoKN1Pd0csaP1tAf8lIc9dtAnXYewyEmvYvU7jtrTAaDy2zDLslZn-t28Zvn5ONh9b58Ktabx-fl_boY8z6psNpgI_u6lMpK0TCsSgZGKFQaBKDoOsXBIKuNVkL1ivdKSw09MG6MRuRzcnPsOwb_NdmY2q2fgssjWwYlNCDzydl1fXSFiO0Yhr0Oh_b_U_wbNpNdTw |
ContentType | Journal Article |
Copyright | Copyright Royal Society of Chemistry 2018 |
Copyright_xml | – notice: Copyright Royal Society of Chemistry 2018 |
DBID | 7SP 7U5 8FD L7M |
DOI | 10.1039/c7tc04732k |
DatabaseName | Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Solid State and Superconductivity Abstracts |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 2050-7534 |
EndPage | 126 |
ExternalDocumentID | c7tc04732k |
GroupedDBID | -JG 0-7 705 AAEMU ABGFH ACLDK ADSRN AEFDR AFVBQ AGSTE AUDPV BSQNT C6K EE0 EF- GNO H~N J3I R7C RCNCU RPMJG RRC RSCEA SKA SKF SLH 0R~ 4.4 7SP 7U5 8FD AAIWI AAJAE AANOJ AAWGC AAXHV ABASK ABDVN ABEMK ABJNI ABPDG ABRYZ ABXOH ACGFS ADMRA AENEX AENGV AESAV AETIL AFLYV AFOGI AFRDS AGEGJ AGRSR AHGCF ALMA_UNASSIGNED_HOLDINGS ANUXI APEMP ASKNT BLAPV EBS ECGLT EJD GGIMP H13 HZ~ L7M O-G O9- RAOCF RNS UCJ |
ID | FETCH-LOGICAL-p205t-eadc95f8156e5492c7120d46c6a040c4bb630dc28da646f63f6a5a0f023ddacc3 |
ISSN | 2050-7526 |
IngestDate | Thu Oct 10 19:12:20 EDT 2024 Mon Jan 28 16:44:25 EST 2019 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 1 |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-p205t-eadc95f8156e5492c7120d46c6a040c4bb630dc28da646f63f6a5a0f023ddacc3 |
PQID | 2010905752 |
PQPubID | 2047521 |
PageCount | 8 |
ParticipantIDs | proquest_journals_2010905752 rsc_primary_c7tc04732k |
ProviderPackageCode | J3I ACLDK RRC AEFDR GNO RCNCU SLH EE0 RSCEA AFVBQ C6K H~N 0-7 RPMJG SKA -JG AGSTE AUDPV EF- BSQNT SKF ADSRN ABGFH 705 AAEMU R7C |
PublicationCentury | 2000 |
PublicationDate | 2018-01-01 |
PublicationDateYYYYMMDD | 2018-01-01 |
PublicationDate_xml | – month: 01 year: 2018 text: 2018-01-01 day: 01 |
PublicationDecade | 2010 |
PublicationPlace | Cambridge |
PublicationPlace_xml | – name: Cambridge |
PublicationTitle | Journal of materials chemistry. C, Materials for optical and electronic devices |
PublicationYear | 2018 |
Publisher | Royal Society of Chemistry |
Publisher_xml | – name: Royal Society of Chemistry |
References_xml | – issn: 2004 publication-title: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon doi: Pichler – issn: 1990 publication-title: Pratical Surface Analysis. Volume 1: Auger and X-ray Photoelectron Spectroscopy doi: Briggs Seah |
SSID | ssj0000816869 |
Score | 2.2523274 |
Snippet | Due to their interesting optical and electronic properties, silicon nanocrystals (Si NCs) are the subject of intense research activity. The definition of their... |
SourceID | proquest rsc |
SourceType | Aggregation Database Publisher |
StartPage | 119 |
SubjectTerms | Conduction bands Electronic properties Electronic structure Electrons Energy gap Energy measurement Nanocrystals Optical properties Photoluminescence Quantum confinement Silicon dioxide Valence band X ray photoelectron spectroscopy |
Title | Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2 |
URI | https://www.proquest.com/docview/2010905752 |
Volume | 6 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3daxQxEA_2iqAPotVibSt58K1EN9kku_t4yJUqfoB3hb4dyWxWDnXvuI8H_es7yeYue1RBfVlCBsLu_LKTyTDzG0JeOQ5GClcxV-bAJOc5q4TJmASrTVlxPCL9RfHjJ311Ld_fqJvUUTBUl6zta_j127qS_0EV5xBXXyX7D8juFsUJHCO--ESE8flXGI9SDxsbAuCBDHaz7IhkN209X7i6qwdg3Xg8u2hNO4flT_QKv68u3A_r0PR4AiaUfRYJf5_4sVepMHZfN7PQACr14_IkBD59ai_c6jkcXUwTGPajCrzsRRWC8RGZylihRKSp7s_F4GO0nvrOJuksIY-WsDtUebfQHXud5Z7uFIo1ZLLIxbd0Ku1yBZPwgByKolJqQA6Ho8m7D7tYWmgeEroX7l57y0SbV2_SAnu3iIPltsVLcCUmj8mjeAegww7QJ-Sea4_Iwx4z5BG5HzJzYfWUfEkgUw8yTSDTeUMjyNRLIsh0PKN9kOkWZDprqQf5Gbm-HE3eXrHYCIMt8IPWDP92qFTjiX2cZ9SDgouslhq0QRsM0lqdZzWIsjZa6kbnjTbKZA36Y3VtAPJjMmjnrXtOqK2rUjrBQdlGlp5MUivHBUjwrEpSn5CzrYqmcaevpiKk76JjL07IMaptuuiYUKZJtS_-JDglD9L-OiMD1JE7Rz9ubV9GGG8BAlxG7g |
link.rule.ids | 315,786,790,27955,27956 |
linkProvider | Royal Society of Chemistry |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Electronic+band+structures+of+undoped+and+P-doped+Si+nanocrystals+embedded+in+SiO2&rft.au=Arduca%2C+E&rft.au=Seguini%2C+G&rft.au=Martella%2C+C&rft.au=Lamperti%2C+A&rft.date=2018-01-01&rft.issn=2050-7526&rft.eissn=2050-7534&rft.volume=6&rft.issue=1&rft.spage=119&rft.epage=126&rft_id=info:doi/10.1039%2Fc7tc04732k&rft.externalDocID=c7tc04732k |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2050-7526&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2050-7526&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2050-7526&client=summon |