NUMERICAL SIMULATION OF THE TIME-RESOLVED SURFACE PHOTOVOLTAGE AT Si-SiO2 INTERFACES

We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with quasi-continuously distributed non-interacting interface states. The simulated SPV time dependence is compared with experimental results, and...

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Published inJournal of Optoelectronics and Advanced Materials Vol. 7; no. 1; pp. 529 - 532
Main Authors Kirilov, K, Germanova, K, Donchev, V, Ivanov, Tzv
Format Journal Article
LanguageEnglish
Published 01.02.2005
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Abstract We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with quasi-continuously distributed non-interacting interface states. The simulated SPV time dependence is compared with experimental results, and a reasonable agreement is found.
AbstractList We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with quasi-continuously distributed non-interacting interface states. The simulated SPV time dependence is compared with experimental results, and a reasonable agreement is found.
Author Ivanov, Tzv
Donchev, V
Kirilov, K
Germanova, K
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  givenname: Tzv
  surname: Ivanov
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