Benefits of Zero Degree Single Wafer High Energy Implants for Advanced Semiconductor Device Fabrication

• Published in: Ion Implantation Technology 2008 Vol. 1066; pp. 261 - 264
• Main Authors: Lee, Woojin, Thanigaivelan, Thirumal, Gossmann, Hans-Joachim, Low, Russell, Colombeau, Benjamin, Lacey, Kerry, Merrill, Mark, Renau, Anthony
• Format: Journal Article
• Language: English
• Published: 01.01.2008

High energy well implants for retrograde well formation are usually tilted to avoid channeling. However, this can cause the well profile under the STI (Shallow Trench Isolation) to be skewed or asymmetric due to shadowing by the resist. This results in poor inter-well isolation and increased leakage...