All‐Electrical Detection of the Spin‐Charge Conversion in Nanodevices Based on SrTiO3 2‐D Electron Gases

• Published in: Advanced functional materials Vol. 34; no. 3
• Main Authors: Gallego, Fernando, Trier, Felix, Mallik, Srijani, Bréhin, Julien, Varotto, Sara, Luis Moreno Vicente‐Arche, Tanay Gosavy, Chia‐Ching Lin, Jean‐René Coudevylle, Iglesias, Lucía, Casanova, Fèlix, Young, Ian, Vila, Laurent, Jean‐Philippe Attané, Bibes, Manuel
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01.01.2024
• Subjects: Charge efficiency; Electric charge; Electromagnetism; Electron spin; Ferromagnetism; Hall effect; Magnetoresistance; Magnetoresistivity; Nanotechnology devices; New technology; Spintronics; Strontium titanates
• DOI: 10.1002/adfm.202307474
• ISSN: 1616-301X

The Magnetoelectric Spin‐Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin‐orbit (SO) element for information read‐out through spin‐charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two‐dimensional electron gases (2DEGs) have shown very large spin‐charge conversion efficiencies, albeit mostly in spin‐pumping experiments. Here, all‐electrical spin‐injection and spin‐charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs are reported. Nanodevices aredesigned, patterned, and fabricated in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. The spin‐charge conversion signal is optimized by applying back‐gate voltages and studied its temperature evolution. It further disentangles the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect, or the anisotropic magnetoresistance. The combination of non‐volatility and high energy efficiency of these devices can potentially lead to new technology paradigms for beyond‐CMOS computing architectures.