All‐Electrical Detection of the Spin‐Charge Conversion in Nanodevices Based on SrTiO3 2‐D Electron Gases

The Magnetoelectric Spin‐Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin‐orbit (SO) element for information read‐out through spin‐charge conversion. Among candidate SO materials to achieve a la...

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Published inAdvanced functional materials Vol. 34; no. 3
Main Authors Gallego, Fernando, Trier, Felix, Mallik, Srijani, Bréhin, Julien, Varotto, Sara, Luis Moreno Vicente‐Arche, Tanay Gosavy, Chia‐Ching Lin, Jean‐René Coudevylle, Iglesias, Lucía, Casanova, Fèlix, Young, Ian, Vila, Laurent, Jean‐Philippe Attané, Bibes, Manuel
Format Journal Article
LanguageEnglish
Published Hoboken Wiley Subscription Services, Inc 01.01.2024
Subjects
Charge efficiency
Electric charge
Electromagnetism
Electron spin
Ferromagnetism
Hall effect
Magnetoresistance
Magnetoresistivity
Nanotechnology devices
New technology
Spintronics
Strontium titanates
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Summary:The Magnetoelectric Spin‐Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin‐orbit (SO) element for information read‐out through spin‐charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two‐dimensional electron gases (2DEGs) have shown very large spin‐charge conversion efficiencies, albeit mostly in spin‐pumping experiments. Here, all‐electrical spin‐injection and spin‐charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs are reported. Nanodevices aredesigned, patterned, and fabricated in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. The spin‐charge conversion signal is optimized by applying back‐gate voltages and studied its temperature evolution. It further disentangles the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect, or the anisotropic magnetoresistance. The combination of non‐volatility and high energy efficiency of these devices can potentially lead to new technology paradigms for beyond‐CMOS computing architectures.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202307474