Rapid thermal annealing effects on Si p+-n junctions fabricated by low-energy FIB Ga+ implantation
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Published in | IEEE electron device letters Vol. 14; no. 3; pp. 123 - 125 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.03.1993
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Subjects | |
Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/55.215132 |