Data driven model for SiC JFET with thermal effects

• Published in: Nanjing hang kong hang tian da xue xue bao Vol. 46; no. 1; pp. 150 - 158
• Main Authors: Zhu, Ping, Wang, Li, Ruan, Ligang
• Format: Journal Article
• Language: Chinese
• Published: 01.02.2014
• Subjects: Computer programs; Gallium nitrides; JFET; Mathematical models; MOSFETs; Silicon carbide; Software; Switching
• ISSN: 1005-2615

A data driven model with thermal effects is proposed for normally-off SiC JFET. The novel features of the model are that the modeling method saves the trouble of obtaining the physical parameters and takes the temperature of SiC JFET into account. These are particularly important because the device's physical parameters on materials and dimensions are hard to obtain and temperature affects the other major parameters. The model is implemented in Saber software based on the characteristics of the datasheet and the test data. Both simulation and experiment tests are carried out for the research of static characteristics and switching characteristics, which verify the accuracy of the model. Besides, the method of data driven modeling can also be applied to other modern power devices, e.g. SiC MOSFETs, GaN FETs, etc.