Improved Si/SiO x interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

• Published in: Applied surface science Vol. 353; pp. 1269 - 1276
• Main Authors: Gad, Karim M, Vossing, Daniel, Balamou, Patrice, Hiller, Daniel, Stegemann, Bert, Angermann, Heike, Kasemann, Martin
• Format: Journal Article
• Language: English
• Published: 30.10.2015
• Subjects: Annealing; Density; Electric potential; Forming; Oxidation; Passivation; Reduction; Silicon

We analyze the influence of different oxidation methods on the chemical passivation quality of silicon oxide-nanolayers on crystalline silicon wafers with surface photo voltage and quasi-steady-state photo conductance measurements. We present a simple method by means of rapid thermal oxidation (RTO)...