Dy{sup 3+}-doped Ga–Sb–S chalcogenide glasses for mid-infrared lasers
Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared transparency. • The glasses show low phonon energy and intense mid-infrared emissions. • The mid-infrared emissions have high quantum efficie...
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Published in | Materials research bulletin Vol. 70 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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United States
15.10.2015
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Abstract | Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared transparency. • The glasses show low phonon energy and intense mid-infrared emissions. • The mid-infrared emissions have high quantum efficiency. • The mid-infrared emissions have large stimulated emission cross sections. - Abstract: Novel Ga–Sb–S chalcogenide glasses doped with different amount of Dy{sup 3+} ions were prepared. Their thermal stability, optical properties, and mid-infrared (MIR) emission properties were investigated. The glasses show good thermal stability, excellent infrared transparency, very low phonon energy (∼306 cm{sup −1}), and intense emissions centered at 2.95, 3.59, 4.17 and 4.40 μm. Three Judd–Ofelt intensity parameters (Ω{sub 2} = 8.51 × 10{sup −20} cm{sup 2}, Ω{sub 4} = 2.09 × 10{sup −20} cm{sup 2}, and Ω{sub 6} = 1.60 × 10{sup −20} cm{sup 2}) are obtained, and the related radiative transition properties are evaluated. The high quantum efficiencies and large stimulated emission cross sections of the MIR emissions (88.10% and 1.11 × 10{sup −20} cm{sup 2} for 2.95 μm emission, 75.90% and 0.38 × 10{sup −20} cm{sup 2} for 4.40 μm emission, respectively) in the Dy{sup 3+}-doped Ga–Sb–S glasses make them promising gain materials for the MIR lasers. |
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AbstractList | Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared transparency. • The glasses show low phonon energy and intense mid-infrared emissions. • The mid-infrared emissions have high quantum efficiency. • The mid-infrared emissions have large stimulated emission cross sections. - Abstract: Novel Ga–Sb–S chalcogenide glasses doped with different amount of Dy{sup 3+} ions were prepared. Their thermal stability, optical properties, and mid-infrared (MIR) emission properties were investigated. The glasses show good thermal stability, excellent infrared transparency, very low phonon energy (∼306 cm{sup −1}), and intense emissions centered at 2.95, 3.59, 4.17 and 4.40 μm. Three Judd–Ofelt intensity parameters (Ω{sub 2} = 8.51 × 10{sup −20} cm{sup 2}, Ω{sub 4} = 2.09 × 10{sup −20} cm{sup 2}, and Ω{sub 6} = 1.60 × 10{sup −20} cm{sup 2}) are obtained, and the related radiative transition properties are evaluated. The high quantum efficiencies and large stimulated emission cross sections of the MIR emissions (88.10% and 1.11 × 10{sup −20} cm{sup 2} for 2.95 μm emission, 75.90% and 0.38 × 10{sup −20} cm{sup 2} for 4.40 μm emission, respectively) in the Dy{sup 3+}-doped Ga–Sb–S glasses make them promising gain materials for the MIR lasers. |
Author | Guo, Wei Yang, Zhiyong Ren, He Yang, Yan Tang, Dingyuan Zhang, Mingjie Zhang, Bin Zhai, Chengcheng Peng, Yuefeng Yang, Anping Wang, Yuwei |
Author_xml | – sequence: 1 fullname: Zhang, Mingjie organization: Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China) – sequence: 2 fullname: Yang, Anping email: apyang@jsnu.edu.cn organization: Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China) – sequence: 3 fullname: Peng, Yuefeng organization: Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China) – sequence: 4 fullname: Zhang, Bin – sequence: 5 fullname: Ren, He – sequence: 6 fullname: Guo, Wei – sequence: 7 fullname: Yang, Yan – sequence: 8 fullname: Zhai, Chengcheng – sequence: 9 fullname: Wang, Yuwei – sequence: 10 fullname: Yang, Zhiyong – sequence: 11 fullname: Tang, Dingyuan organization: Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China) |
BackLink | https://www.osti.gov/biblio/22475889$$D View this record in Osti.gov |
BookMark | eNotjN9KwzAcRoNMsJu-Q9FLSc0vf5rkcs46JxVhndcjTdKtMpvR1AsRwXfwDX0SJ3pzPjjwnTEadaHzCJ0DyYBAfnWfPUxXxXJZVNdPZZlRAiIjPCOgj1ACSjLMKZUjlBBCBRacqBM0jvGZEMKVlAla3Ly9x9d9yi4_sAt779K5-f78qupfpHZrdjZsfNc6n252JkYf0yb06UvrcNs1vekPj4P3fTxFx43ZRX_2vxNU3Rar2R0uH-eL2bTEQasBK9DKKeMYA02dYYJxK6HWIIWCnEiSN1xxyHNpaK69VHWtBFBdgxOGUjZBF3_VEId2HW07eLu1oeu8HdaU8kNGafYDL9dSmw |
ContentType | Journal Article |
DBID | OTOTI |
DOI | 10.1016/J.MATERRESBULL.2015.04.019 |
DatabaseName | OSTI.GOV |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Chemistry |
EISSN | 1873-4227 |
ExternalDocumentID | 22475889 |
GroupedDBID | --K --M -~X .~1 0R~ 1B1 1~. 1~5 4.4 457 4G. 5GY 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALMO AALRI AAOAW AAQFI AAXUO ABMAC ABPIF ABPTK ABXRA ABYKQ ACDAQ ACGFS ACRLP ADBBV ADEZE ADIYS AEBSH AEKER AENEX AEZYN AFKWA AFTJW AGHFR AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 DU5 EBS EFJIC EJD EO8 EO9 EP2 EP3 F5P FDB FIRID FNPLU FYGXN G-Q GBLVA IHE J1W KOM M24 M41 MAGPM MO0 N9A O-L O9- OAUVE OTOTI OZT P-8 P-9 P2P PC. Q38 RIG RNS ROL RPZ SDF SDG SDP SES SPC SPCBC SPD SSM SSZ T5K XPP YQT ZMT ~02 ~G- |
ID | FETCH-LOGICAL-o98t-8198d8ad33192da3534c71b91758160706f4841667a269e78bb85129b1d5a223 |
ISSN | 0025-5408 |
IngestDate | Thu May 18 18:39:10 EDT 2023 |
IsPeerReviewed | true |
IsScholarly | true |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-o98t-8198d8ad33192da3534c71b91758160706f4841667a269e78bb85129b1d5a223 |
ParticipantIDs | osti_scitechconnect_22475889 |
PublicationCentury | 2000 |
PublicationDate | 2015-10-15 |
PublicationDateYYYYMMDD | 2015-10-15 |
PublicationDate_xml | – month: 10 year: 2015 text: 2015-10-15 day: 15 |
PublicationDecade | 2010 |
PublicationPlace | United States |
PublicationPlace_xml | – name: United States |
PublicationTitle | Materials research bulletin |
PublicationYear | 2015 |
SSID | ssj0004877 |
Score | 2.3260527 |
Snippet | Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared... |
SourceID | osti |
SourceType | Open Access Repository |
SubjectTerms | ANTIMONY COMPOUNDS CHALCOGENIDES CROSS SECTIONS DOPED MATERIALS DYSPROSIUM ADDITIONS GALLIUM COMPOUNDS GLASS INTERMEDIATE INFRARED RADIATION LUMINESCENCE MATERIALS SCIENCE OPACITY PHONONS QUANTUM EFFICIENCY RAMAN SPECTROSCOPY STABILITY STIMULATED EMISSION SULFUR COMPOUNDS |
Title | Dy{sup 3+}-doped Ga–Sb–S chalcogenide glasses for mid-infrared lasers |
URI | https://www.osti.gov/biblio/22475889 |
Volume | 70 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELZKewAOFS0goKXygT1FXjZxnDjH3W4fVF0u20rtqbJjR10Em1XJHgpqxX_gH_JLGD_yqAoIuFjRRHKy-Ubjz96ZbxB6w2INfhFnJMvMaRUQViIYi0hUFLHO2SDhNnl88j45PI2PzthZ26XTVpdUsp9_-WVdyf-gCjbA1VTJ_gOyzaRggGvAF0ZAGMa_wnh83UtHn5eLgPaiUS8dE1UugEAeiDqFgU5le2mKfD_mJcw2UzqwtFlbNYbg00wReJ8rm4wOdp8VX5PWiajcrwm8NNBlILuq3d1z5wkshR9mjbece_NwvqjXSBuHnfV8qQvdmptJRn5ifxoRWhVTV4_ZVAcwk2zhYqp2QZWnlMSR0wCoo65rF3IvgLuzhKP-ZAhsHnxwdHp8bBLwmBWk9dH1rkA2kBDY9PDsAVqLYK9ggl3_ts3zgR1Z07fXvFitPBsmb3__GFigSwixHapx8gSt-z0CHjrAN9CKnm-ih7t1a75N9LijIvkUvRtffwUnwDS4cQ6AD8SPb9-n0gy4Czr2oGMAHXdBxw70Z2i6v3eye0h8hwxSZrwiwOa44kJRiKOREpTROE9DCTtwxo1w4CApYvO3cpKKKMl0yqXkhuDJUDEBvPA5Wp2Xc_0C4STUmkpZKGD7MVVJVuRCSh3C9DQbFOlLtG2-xwXQMqMtnJskrLy6qD_9qz_f3kKPWl_ZRqvV1VK_Bi5XyR2L1U8AAUNu |
linkProvider | Elsevier |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Dy%7Bsup+3%2B%7D-doped+Ga%E2%80%93Sb%E2%80%93S+chalcogenide+glasses+for+mid-infrared+lasers&rft.jtitle=Materials+research+bulletin&rft.au=Zhang%2C+Mingjie&rft.au=Yang%2C+Anping&rft.au=Peng%2C+Yuefeng&rft.au=Zhang%2C+Bin&rft.date=2015-10-15&rft.issn=0025-5408&rft.eissn=1873-4227&rft.volume=70&rft_id=info:doi/10.1016%2FJ.MATERRESBULL.2015.04.019&rft.externalDocID=22475889 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0025-5408&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0025-5408&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0025-5408&client=summon |