Lifetimes of hydrogen and deuterium related vibrational modes in silicon

Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we...

Full description

Saved in:
Bibliographic Details
Published inPhysical review letters Vol. 87; no. 14; p. 145501
Main Authors Budde, M, Lüpke, G, Chen, E, Zhang, X, Tolk, N H, Feldman, L C, Tarhan, E, Ramdas, A K, Stavola, M
Format Journal Article
LanguageEnglish
Published United States 01.10.2001
Online AccessGet more information

Cover

More Information
Summary:Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.87.145501