Metal PCB에 있어서 양극산화법으로 제작한 Al₂O₃ 절연막의 방열특성
High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with...
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Published in | Biuletyn Uniejowski Vol. 48; no. 2; pp. 33 - 37 |
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Main Authors | , , , |
Format | Journal Article |
Language | Korean |
Published |
한국표면공학회
01.04.2015
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Subjects | |
Online Access | Get full text |
ISSN | 1225-8024 2299-8403 2288-8403 |
DOI | 10.5695/JKISE.2015.48.2.33 |
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Abstract | High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of 60 μm aluminum oxide(Al2O3) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of Al2O3 by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer. KCI Citation Count: 2 |
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AbstractList | High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of 60 μm aluminum oxide(Al2O3) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of Al2O3 by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer. KCI Citation Count: 2 |
Author | 김정호(Jeong-Ho Kim) 고상원(Sang-Won Ko) 조재승(Jae-Seung Jo) 임실묵(Sil-Mook Lim) |
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DocumentTitleAlternate | Heat dissipation of Al2O3 Insulation layer Prepared by Anodizing Process for Metal PCB |
DocumentTitle_FL | Heat dissipation of Al₂O₃ Insulation layer Prepared by Anodizing Process for Metal PCB |
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Keywords | ceramic insulation layer heat dissipation layer thermal conductivity anodizing aluminum oxide LED insulation layer LED PCB |
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Title | Metal PCB에 있어서 양극산화법으로 제작한 Al₂O₃ 절연막의 방열특성 |
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