Effects of Post- Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates
The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-dop...
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Published in | 대한금속·재료학회지, 53(10) pp. 745 - 750 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
대한금속·재료학회
01.10.2015
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Subjects | |
Online Access | Get full text |
ISSN | 1738-8228 2288-8241 |
DOI | 10.3365/KJMM.2015.53.10.745 |
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Abstract | The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 ℃ had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest INBE/IDLE ratio was observed in the film annealed at 400 ℃. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 ℃ KCI Citation Count: 2 |
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AbstractList | The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 ℃ had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest INBE/IDLE ratio was observed in the film annealed at 400 ℃. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 ℃ KCI Citation Count: 2 |
Author | 남기웅 김익현 임재영 김영규 |
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Title | Effects of Post- Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates |
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