Effects of Post- Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates

The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-dop...

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Published in대한금속·재료학회지, 53(10) pp. 745 - 750
Main Authors 김익현, 김영규, 남기웅, 임재영
Format Journal Article
LanguageEnglish
Published 대한금속·재료학회 01.10.2015
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ISSN1738-8228
2288-8241
DOI10.3365/KJMM.2015.53.10.745

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Abstract The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 ℃ had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest INBE/IDLE ratio was observed in the film annealed at 400 ℃. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 ℃ KCI Citation Count: 2
AbstractList The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 ℃ had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest INBE/IDLE ratio was observed in the film annealed at 400 ℃. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 ℃ KCI Citation Count: 2
Author 남기웅
김익현
임재영
김영규
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  fullname: 남기웅
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  fullname: 임재영
  organization: (인제대학교)
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Snippet The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron...
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Title Effects of Post- Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates
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