P-I-N 역구조 페로브스카이트 태양전지 응용을 위한 Nickel oxide 홀전달층의 열처리 온도 연구

A Nickel oxide (NiOx) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiOx thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of...

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Published inCurrent Photovoltaic Research Vol. 11; no. 4; pp. 103 - 107
Main Authors 김기성(Gisung Kim), 김미정(Mijoung Kim), 김효정(Hyojung Kim), 양정엽(JungYup Yang)
Format Journal Article
LanguageKorean
Published 한국태양광발전학회 2023
Subjects
기타공학
x&lt
Inorganic hole transport layer
Annealing temperature
thin film
NiO&lt
Sol-gel process
SUB&gt
p-i-n inverted perovskite solar cells
NiO_x$ thin film
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ISSN2288-3274
2508-125X

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Summary:A Nickel oxide (NiOx) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiOx thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiOx thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiOx coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiOx thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.
Bibliography:KISTI1.1003/JNL.JAKO202305972206603
ISSN:2288-3274
2508-125X