Bi‐Deficiency Leading to High‐Performance in Mg3(Sb,Bi)2‐Based Thermoelectric Materials

• Published in: Advanced Materials Vol. 35; no. 23; pp. e2209119 - n/a
• Main Authors: Li, Jing‐Wei, Liu, Weishu, Xu, Wei, Zhuang, Hua‐Lu, Han, Zhijia, Jiang, Feng, Zhang, Peng, Hu, Haihua, Gao, Hanbin, Jiang, Yilin, Cai, Bowen, Pei, Jun, Su, Bin, Li, Qian, Hayashi, Kei, Li, Hezhang, Miyazaki, Yuzuru, Cao, Xingzhong, Zheng, Qiang, Li, Jing‐Feng
• Format: Journal Article
• Language: English; Japanese
• Published: Weinheim Wiley 01.06.2023; Wiley Subscription Services, Inc
• Subjects: Antimony; Bismuth; defect engineering; Defects; lattice thermal conductivity; Mg3(Sb,Bi)2; Positron annihilation; Room temperature; Scanning transmission electron microscopy; Scattering; Thermoelectric materials; Transport properties; Tuning

Mg3(Sb,Bi)2 is a potential nearly‐room temperature thermoelectric compound composed of earth‐abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg) in Mg3(Sb,Bi)2. This study pr...