EFFECT OF PARTIAL PRESSURE OF OXYGEN ON SELF-DIFFUSION OF Si IN SiO2

The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor Si wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of O mixed into Ar annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while...

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Published inJpn.J.Appl.Phys ,Part 2. Vol. 42, no. 12B, pp. L1492-L1494. 2003 Vol. 42; no. 12B; pp. L1492 - L1494
Main Authors Fukatsu, S, Takahashi, T, Itoh, K M, Uematsu, M, Fujiwara, A, Kageshima, H, Takahashi, Y
Format Journal Article
LanguageEnglish
Published 15.12.2003
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Summary:The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor Si wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of O mixed into Ar annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by SIMS. The Si self-diffusivity is found not to depend on the partial pressure of O within experimental error of about plus/minus 33%. 17 refs.
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ISSN:0021-4922
DOI:10.1143/jjap.42.L1492