Ferroelectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films on SrRuO3/SrTiO3 substrates
Saved in:
Published in | Japanese journal of applied physics Vol. 36; no. 9A; pp. 5575 - 5579 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
1997
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Author | KOMATSU, S KAWAKUBO, T YANASE, N ABE, K SANO, K |
---|---|
Author_xml | – sequence: 1 givenname: K surname: ABE fullname: ABE, K organization: Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation, Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan – sequence: 2 givenname: S surname: KOMATSU fullname: KOMATSU, S organization: Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation, Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan – sequence: 3 givenname: N surname: YANASE fullname: YANASE, N organization: Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation, Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan – sequence: 4 givenname: K surname: SANO fullname: SANO, K organization: Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation, Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan – sequence: 5 givenname: T surname: KAWAKUBO fullname: KAWAKUBO, T organization: Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation, Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2058323$$DView record in Pascal Francis |
BookMark | eNotj01Lw0AYhBepYFq9-QP24DXpu59JjrXYailETD2XzWaXbkmTsLsF_fcG9TQzPMPAzNGsH3qD0COBjBDOlrvd6j1jMhMiFzcoIYznKQcpZigBoCTlJaV3aB7CeYpScJIgtTHeD6YzOnqn8eiH0fjoTMCuxycTzQRHF9WXUx1-VpDJ2kPGD65iOJ6mjnXdJeChx7X_uFZsWftfFq5NiF5FE-7RrVVdMA__ukCfm5fD-jXdV9u39WqfnhmDmFpKQeiCEKFt0QJwoK0VpuFSU5BtSxtV6umL1HZyJS3yxijNSkKsli3P2QI9_e2OKmjVWa967cJx9O6i_PdxWi8YZewHBuxYSQ |
CODEN | JJAPA5 |
ContentType | Journal Article |
Copyright | 1998 INIST-CNRS |
Copyright_xml | – notice: 1998 INIST-CNRS |
DBID | IQODW |
DOI | 10.1143/JJAP.36.5575 |
DatabaseName | Pascal-Francis |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 1347-4065 |
EndPage | 5579 |
ExternalDocumentID | 2058323 |
GroupedDBID | 4.4 AALHV ACGFS ACNCT AEFHF AI. ALMA_UNASSIGNED_HOLDINGS ATQHT CEBXE F5P IOP IQODW IZVLO KOT MC8 N5L QTG RNS RW3 SJN TKC VH1 |
ID | FETCH-LOGICAL-j330t-f2205c8115cf8d00402df5eb46c206dd2ba9c0656cfba99287beac3911fc6d473 |
ISSN | 0021-4922 |
IngestDate | Thu Nov 24 18:36:10 EST 2022 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 9A |
Keywords | Thin films Inorganic compounds Ferroelectricity Transition element compounds Size effect Dielectric hysteresis Strontium titanates Barium titanates Experimental study Quaternary compounds |
Language | English |
License | CC BY 4.0 |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-j330t-f2205c8115cf8d00402df5eb46c206dd2ba9c0656cfba99287beac3911fc6d473 |
PageCount | 5 |
ParticipantIDs | pascalfrancis_primary_2058323 |
PublicationCentury | 1900 |
PublicationDate | 1997-00-00 |
PublicationDateYYYYMMDD | 1997-01-01 |
PublicationDate_xml | – year: 1997 text: 1997-00-00 |
PublicationDecade | 1990 |
PublicationPlace | Tokyo |
PublicationPlace_xml | – name: Tokyo |
PublicationTitle | Japanese journal of applied physics |
PublicationYear | 1997 |
Publisher | Japanese journal of applied physics |
Publisher_xml | – name: Japanese journal of applied physics |
SSID | ssj0026541 ssj0026590 ssj0026540 ssj0064762 |
Score | 1.6332473 |
SourceID | pascalfrancis |
SourceType | Index Database |
StartPage | 5575 |
SubjectTerms | Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Domain structure; hysteresis Exact sciences and technology Ferroelectricity and antiferroelectricity Physics |
Title | Ferroelectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films on SrRuO3/SrTiO3 substrates |
Volume | 36 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1La9tAEF7clEJzKG3a0kcS9tCrFFX7kHRUgkNwiWUqG9JT0L7AoZWDbEPoX-mf7axW1iMEmvQiJK1l5J3PO4-d-QahL1EkpOCaeqA-AnBQjPJilTCviELDFBM8rgP6l1N-saCTK3Y1Gv3pZS1tN8KXvx-sK_kfqcI9kKutkn2CZNsvhRtwDvKFI0gYjo-S8bmuqpVrZLOUNtXq1mZJ1ylWYAHCjK20bQpyZ6Pip0Xg87wKfDpfZgTsTfiMWf78VW8X5NX3bWa5FfKqHl3DclLT1q4HxisoVtuwsk83UTRWrIuQtAZ6ejoexFC_ZZfpPF8MYq0_0mmaj4fbQek0655TTXVe1KmIR77BroQAHNfEFST72q28hEaAFdc4Yrc0O26UBoJJ2ltoGXMNVxqlDZfJwwqB2smbTNKZT7jfPdXn3b6nD9ssxTBgsN6RZ-h5aFkEbXVoNmu9ec4sS0538bV3kbQjnEa8Yax3P3lXfEHJSf-tbE5usYa_pXH9VHpGzvw1etV4Jzh1UHuDRro8QPs9zsoD9GLm5vktKgbwwx388LLE9-CHh_DDFn64hh9eldjB78SBD3fge4cW5-P52YXXdOzwbggJNp6xZdsyBi9DmlhZBREqw7SgXIYBVyoURSJBxlwaOEvAWxeg-AkoXCO5ohF5j_bKVak_IFwQu8OuDVEMjE5BYxOCNcwDE0bgYgjyER0NJuz61rGzXDdS-_SP8c_opWMittG0Q7S3qbb6COzLjTiu5fwXWsZ21Q |
link.rule.ids | 315,783,787,4033,27937,27938,27939 |
linkProvider | IOP Publishing |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Ferroelectric+properties+in+heteroepitaxial+Ba0.6Sr0.4TiO3+thin+films+on+SrRuO3%2FSrTiO3+substrates&rft.jtitle=Japanese+journal+of+applied+physics&rft.au=ABE%2C+K&rft.au=KOMATSU%2C+S&rft.au=YANASE%2C+N&rft.au=SANO%2C+K&rft.date=1997&rft.pub=Japanese+journal+of+applied+physics&rft.issn=0021-4922&rft.eissn=1347-4065&rft.volume=36&rft.issue=9A&rft.spage=5575&rft.epage=5579&rft_id=info:doi/10.1143%2FJJAP.36.5575&rft.externalDBID=n%2Fa&rft.externalDocID=2058323 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0021-4922&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0021-4922&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0021-4922&client=summon |