Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

• Published in: Advanced electronic materials Vol. 4; no. 7
• Main Authors: Park, Min Hyuk, Chung, Ching‐Chang, Schenk, Tony, Richter, Claudia, Opsomer, Karl, Detavernier, Christophe, Adelmann, Christoph, Jones, Jacob L., Mikolajick, Thomas, Schroeder, Uwe
• Format: Journal Article
• Language: English
• Published: 01.07.2018
• Subjects: ferroelectricity; fluorite structure; hafnia; phase transitions; X‐ray diffraction

The ferroelectricity in fluorite oxides has gained increasing interest due to its promising properties for multiple applications in semiconductor as well as energy devices. The structural origin of the unexpected ferroelectricity is now believed to be the formation of a non‐centrosymmetric orthorhom...