Large‐Area 2D Layered MoTe2 by Physical Vapor Deposition and Solid‐Phase Crystallization in a Tellurium‐Free Atmosphere

• Published in: Advanced materials interfaces Vol. 4; no. 17
• Main Authors: Huang, Jyun‐Hong, Deng, Kuang‐Ying, Liu, Pang‐Shiuan, Wu, Chien‐Ting, Chou, Cheng‐Tung, Chang, Wen‐Hao, Lee, Yao‐Jen, Hou, Tuo‐Hung
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 08.09.2017
• Subjects: Bonding strength; Chemical bonds; Chemical vapor deposition; Crystallization; Free atmosphere; Molybdenum disulfide; molybdenum ditelluride (MoTe2); Optoelectronics; phase transition; Phase transitions; Physical vapor deposition; Silicon dioxide; solid‐phase crystallization; Sublimation; Tellurium; transition‐metal dichalcogenides (TMDs)

Molybdenum ditelluride (MoTe2) has attracted considerable interest for nanoelectronic, optoelectronic, spintronic, and valleytronic applications because of its modest band gap, high field‐effect mobility, large spin–orbit‐coupling splitting, and tunable 1T′/2H phases. However, synthesizing large‐are...