Engineering of interface band bending and defects elimination via a Ag-graded active layer for efficient (Cu,Ag)2ZnSn(S,Se)4 solar cells

• Published in: Energy & environmental science Vol. 10; no. 11; pp. 2401 - 2410
• Main Authors: Ya-Fang, Qi, Dong-Xing Kou, Wen-Hui, Zhou, Zheng-Ji, Zhou, Qing-Wen, Tian, Yue-Na, Meng, Xin-Sheng, Liu, Zu-Liang, Du, Si-Xin, Wu
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 01.11.2017
• Subjects: Absorbers; Copper; Defects; Electromagnetic absorption; Fermi level; Incident light; Interlayers; Open circuit voltage; Photovoltaic cells; Recombination; Solar cells

Although the substitution of Cu by Ag to suppress CuZn defects offers several advantages in overcoming the large open-circuit voltage (Voc) deficit for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, an excellent performance has not been achieved to date primarily due to the Fermi level pinning at the CdS/abso...