GROWTH MECHANISM OF SiC FILM ON A Si(111)-(7 x7) SURFACE BY C60 PRECURSOR STUDIED BY PHOTOELECTRON SPECTROSCOPY

• Published in: Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 7B, pp. 4536-4539. 2000 Vol. 39; no. 7B; pp. 4536 - 4539
• Main Authors: Sakamoto, K, Kondo, D, Ohno, K, Kimura, A, Kakizaki, A, Suto, S
• Format: Journal Article
• Language: English
• Published: 2000
• ISSN: 0021-4922
• DOI: 10.1143/JJAP.39.4536

Authors have investigated the growth mechanism of SiC film by the thermal reaction of C60 molecules adsorbed on a Si(111)-(7 x7) surface using photoelectron spectroscopy. The growth of SiC film, performed by repeating the sample annealing at 1370 K following the adsorption of C60 molecules, is confirmed by the profile of the valence spectrum. The bonding nature between C60 molecules and the SiC surface is considered to have a covalent character at 300 and 670 K, and both covalent and ionic characters at 870 K by the thermal-dependent valence and C 1s core level spectra of a 1 monolayer C60 film adsorbed on SiC. Furthermore, authors determined that the breaking of the C60 cage and the formation of SiC occurred at 1070 K, i.e. at a temperature 100 K lower than that on a Si(111) surface. 16 refs.