Design Optimization of High Breakdown Voltage AlGaN/GaN High Electron Mobility Transistor with Insulator Dielectric Passivation Layer

• Published in: E-journal of surface science and nanotechnology Vol. 22; no. 1
• Main Authors: Phuc Hong Than, Than, Tho Quang
• Format: Journal Article
• Language: English; Japanese
• Published: Tokyo Japan Science and Technology Agency 01.01.2024
• Subjects: Aluminum gallium nitrides; Aluminum oxide; CAD; Computer aided design; Design optimization; Dielectric breakdown; Electric potential; Gallium nitrides; Hafnium oxide; Heterostructures; High electron mobility transistors; Material properties; Parameters; Passivity; Semiconductor devices; Silicon dioxide; Thickness; Voltage

AlGaN/GaN high electron mobility transistors (HEMTs) possess favorable material properties and are compatible with large-scale manufacturing, making them promising as a next-generation power device. However, there is a lack of information available on the effect of an insulator dielectric passivatio...