APA (7th ed.) Citation

Than, P. H., & Than, T. Q. (2024). Design Optimization of High Breakdown Voltage AlGaN/GaN High Electron Mobility Transistor with Insulator Dielectric Passivation Layer. E-journal of surface science and nanotechnology, 22(1), . https://doi.org/10.1380/ejssnt.2023-061

Chicago Style (17th ed.) Citation

Than, Phuc Hong, and Tho Quang Than. "Design Optimization of High Breakdown Voltage AlGaN/GaN High Electron Mobility Transistor with Insulator Dielectric Passivation Layer." E-journal of Surface Science and Nanotechnology 22, no. 1 (2024). https://doi.org/10.1380/ejssnt.2023-061.

MLA (9th ed.) Citation

Than, Phuc Hong, and Tho Quang Than. "Design Optimization of High Breakdown Voltage AlGaN/GaN High Electron Mobility Transistor with Insulator Dielectric Passivation Layer." E-journal of Surface Science and Nanotechnology, vol. 22, no. 1, 2024, https://doi.org/10.1380/ejssnt.2023-061.