Thermodynamics of phase separation in SiGe solid solution and construction of the miscibility gap at low temperatures for cubic-phase Si-Ge binary alloy semiconductors

The subject paper presents a thermodynamic study of the low-temperature spinodal decomposition in SiGe solid solutions and its impact on the properties and performance of Si-Ge alloy semiconductors. The miscibility gap in SiGe alloys originates from their positive enthalpy of mixing and has implicat...

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Bibliographic Details
Published inASMC proceedings pp. 1 - 6
Main Authors Sen, Subhangshu, Autul, Yashdi Saif
Format Conference Proceeding
LanguageEnglish
Published IEEE 05.05.2025
Subjects
band-tilting
DFT
Germanium
Kinetic theory
miscibility gap
opto-electronic devices
Optoelectronic devices
Photonic band gap
quantum traps
Scattering
SiGe alloy semiconductor
Silicon
Silicon germanium
Solids
spinodal decomposition
Temperature
Thermal conductivity
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Summary:The subject paper presents a thermodynamic study of the low-temperature spinodal decomposition in SiGe solid solutions and its impact on the properties and performance of Si-Ge alloy semiconductors. The miscibility gap in SiGe alloys originates from their positive enthalpy of mixing and has implications on their bandgap, charge carrier mobility, thermal conductivity and optoelectronic properties. In this study, we have calculated the enthalpy of mixing of Si-Ge alloy system using DFT and based on our results, we were able to construct a low-temperature phase diagram and identify the unstable and metastable regions of the spinodal plot and also identify the different thermodynamic and kinetic factors that govern the formation of these phase-separated regions.
ISSN:2376-6697
DOI:10.1109/ASMC64512.2025.11010507