A Statistical Approach to Analyze the Impact of Random Discrete Dopant (RDD) and Oxide Thickness Variation (OTV) on the Performance of a Low Power Folded Cascode OTA

• Published in: Devices for Integrated Circuit pp. 343 - 347
• Main Authors: Dutta, Tanusree, Sarkhel, Saheli, Banerjee, Soham, Pandit, Soumya
• Format: Conference Proceeding
• Language: English
• Published: IEEE 05.04.2025
• Subjects: Gaussian distribution; Logic gates; Nanoscale devices; normal distribution; oxide thickness variation; Random discrete dopant; Thickness measurement; Threshold voltage; Transconductance; Very large scale integration; Voltage measurement; Weibull distribution
• DOI: 10.1109/DevIC63749.2025.11012597

The proposed work endeavours to present a statistical study to determine the nature of variation of the major performance parameter i.e. voltage gain of a low power Folded Cascode Operational Transconductance Amplifier (OTA) subject to variations of the two major process parameters-threshold voltage (V th ) and gate oxide thickness (t ox ). The process parameter variations are considered to follow a normal distribution about a mean value with a 3% standard deviation. The OTA circuit is simulated in Spice environment using Python script to generate the entire data set for V th and t ox variations. The OTA gain from the generated data set is analyzed statistically using R programming to determine its nature of variation and is compared with three standard distributions: normal, lognormal and Weibull. The study reveals that the nature of variation of OTA gain due to V th variation follows a normal distribution where OTA gain due to t ox variation follows a Weibull distribution.