Exploiting Flexible Memristor Based on Carbon Quantum Dots for Neuromorphic Computing
Flexible memristors based on carbon quantum dots (CQDs) are explored in this study, representing a pivotal advancement in non-volatile memory technology within the realm of portable artificial intelligence. Leveraging the exceptional flexibility and stability of polyethylene terephthalate (PET) subs...
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Published in | International Conference on Electrical and Electronics Engineering pp. 459 - 463 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
22.04.2024
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Subjects | |
Online Access | Get full text |
ISSN | 2694-3646 |
DOI | 10.1109/ICEEE62185.2024.10779237 |
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Abstract | Flexible memristors based on carbon quantum dots (CQDs) are explored in this study, representing a pivotal advancement in non-volatile memory technology within the realm of portable artificial intelligence. Leveraging the exceptional flexibility and stability of polyethylene terephthalate (PET) substrates, these devices demonstrate resistance switching characteristics akin to their initial state despite enduring multiple instances of destructive folding. Notably, analyses including current-voltage curve (I-V) assessments and long-term potentiation/long-term depression (LTP/LTD) evaluations reinforce this resilience. Furthermore, these devices exhibit classical synaptic behaviors, such as spike-timing-dependent plasticity (STDP), paired-pulse facilitation ( PPF ), and the transition from short-term memory (STM) to long-term memory (LTM). This research represents a significant stride towards the advancement of the next generation of flexible memory devices. |
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AbstractList | Flexible memristors based on carbon quantum dots (CQDs) are explored in this study, representing a pivotal advancement in non-volatile memory technology within the realm of portable artificial intelligence. Leveraging the exceptional flexibility and stability of polyethylene terephthalate (PET) substrates, these devices demonstrate resistance switching characteristics akin to their initial state despite enduring multiple instances of destructive folding. Notably, analyses including current-voltage curve (I-V) assessments and long-term potentiation/long-term depression (LTP/LTD) evaluations reinforce this resilience. Furthermore, these devices exhibit classical synaptic behaviors, such as spike-timing-dependent plasticity (STDP), paired-pulse facilitation ( PPF ), and the transition from short-term memory (STM) to long-term memory (LTM). This research represents a significant stride towards the advancement of the next generation of flexible memory devices. |
Author | Yu, Tianqi Zhao, Zhiwei |
Author_xml | – sequence: 1 givenname: Tianqi surname: Yu fullname: Yu, Tianqi email: 18831236691@163.com organization: School of Electronic Science and Engineering, Southeast University,Nanjing,China,210096 – sequence: 2 givenname: Zhiwei surname: Zhao fullname: Zhao, Zhiwei email: 101010947@seu.edu.cn organization: School of Electronic Science and Engineering, Southeast University,Nanjing,China,210096 |
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Snippet | Flexible memristors based on carbon quantum dots (CQDs) are explored in this study, representing a pivotal advancement in non-volatile memory technology within... |
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SubjectTerms | Carbon carbon quantum dots flexible memristor Memristors Quantum computing Quantum dots Resilience Resistance Stability analysis Substrates Switches Switching circuits synaptic behaviors |
Title | Exploiting Flexible Memristor Based on Carbon Quantum Dots for Neuromorphic Computing |
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