Local laser irradiation technique for SEE testing of ICs

The results of local laser simulation for estimation of SEE parameters are presented. Simulation method is based on the local laser irradiation of VLSI by measuring response in power supply circuits and determining laser threshold energy of SEE.

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Bibliographic Details
Published in2011 12th European Conference on Radiation and Its Effects on Components and Systems pp. 449 - 453
Main Authors Chumakov, A. I., Pechenkin, A. A., Savchenkov, D. V., Tararaksin, A. S., Vasil'ev, A. L., Yanenko, A. V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2011
Subjects
Laser modes
Measurement by laser beam
Radiation effects
Semiconductor lasers
Very large scale integration
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Summary:The results of local laser simulation for estimation of SEE parameters are presented. Simulation method is based on the local laser irradiation of VLSI by measuring response in power supply circuits and determining laser threshold energy of SEE.
ISBN:9781457705854
1457705850
ISSN:0379-6566
DOI:10.1109/RADECS.2011.6131420