Thermally Activated Carrier Dynamics and Photoluminescence in Self-assembled InAs Quantum Dots

• Published in: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings pp. 965 - 967
• Main Authors: Jiunn-Chyi Lee, Yeu- Jent Hu, Ya-Fen Wu, Jia-Hui Fang, Tzer-En Nee, Hui-Tang Shen, Jen-Cheng Wang
• Format: Conference Proceeding
• Language: English
• Published: 01.10.2006
• Subjects: Buffer layers; Epitaxial growth; Gallium arsenide; Laser excitation; Multilevel systems; Photoluminescence; Quantum dots; Temperature dependence; Temperature distribution; Thermal engineering

Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier therm...