A proposal of new concept milli-second annealing: Flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for fabrication of ultra shallow junction with improvement of metal gate high-k CMOS performance

We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility (mu eff ) and bi...

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Bibliographic Details
Published in2008 Symposium on VLSI Technology pp. 110 - 111
Main Authors Onizawa, T., Shinich Kato, Aoyama, T., Yasuo Nara, Yuzuru Ohji
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
Subjects
Annealing
Logic gates
Metals
MOS devices
Performance evaluation
Timing
Titanium
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Summary:We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility (mu eff ) and bias temperature instability (BTI) characteristics. A recovery annealing (RA) treatment after FLA is most effective to recover those degradations. However, the annealing after dopant activation causes deactivation and diffusion. The FSP-FLA allowed us sub-10-milli-second annealing after activation FLA; it realizes high BTI reliability and high mu eff without deactivation and diffusion.
ISBN:142441802X
9781424418022
ISSN:0743-1562
DOI:10.1109/VLSIT.2008.4588582