Ballistic ratio and backscattering coefficient in short-channel NW-FETs

• Published in: 2009 Proceedings of the European Solid State Device Research Conference pp. 476 - 479
• Main Authors: Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.09.2009
• Subjects: Backscatter; Current-voltage characteristics; Data mining; FETs; Genetic expression; MOSFETs; Optical devices; Optical scattering; Scattering parameters; Voltage

In this work we investigate the ballistic ratio and the backscattering coefficient in nanowire FETs operating under quasi-ballistic conditions. Starting from general expressions of the current-voltage characteristics worked out in a previous paper, we extract the above parameters and their functiona...