Purwiyanti, S., Nuryadi, R., & Hartanto, D. (2011, July). A simulation of the applied bias effect of tunnelling probability in quadruple barrier Si/SiO2 system. Proceedings of the 2011 International Conference on Electrical Engineering and Informatics, 1-4. https://doi.org/10.1109/ICEEI.2011.6021788
Chicago Style (17th ed.) CitationPurwiyanti, S., R. Nuryadi, and D. Hartanto. "A Simulation of the Applied Bias Effect of Tunnelling Probability in Quadruple Barrier Si/SiO2 System." Proceedings of the 2011 International Conference on Electrical Engineering and Informatics Jul. 2011: 1-4. https://doi.org/10.1109/ICEEI.2011.6021788.
MLA (9th ed.) CitationPurwiyanti, S., et al. "A Simulation of the Applied Bias Effect of Tunnelling Probability in Quadruple Barrier Si/SiO2 System." Proceedings of the 2011 International Conference on Electrical Engineering and Informatics, Jul. 2011, pp. 1-4, https://doi.org/10.1109/ICEEI.2011.6021788.