Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems

• Published in: Proceedings of the 2005 Particle Accelerator Conference pp. 701 - 703
• Main Authors: Jiquan Guo, Tantawi, S.G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: CMOS process; Diodes; Doping; Nanofabrication; Power semiconductor switches; Pulse compression methods; Radio frequency; Silicon on insulator technology; Switching circuits; Waveguide discontinuities

In this paper, we present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity SOI (silicon on oxide) wafer. The wafer is inserted into a cylindrical waveguide under TE01 mode, performing switching by i...