Relaxation Oscillation in GST-Based Phase Change Memory Devices

• Published in: 2009 IEEE International Memory Workshop pp. 1 - 2
• Main Authors: Jackson, D.C.S., Nardone, M., Karpov, V., Karpov, I.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2009
• Subjects: Atomic measurements; Crystallization; Electrical resistance measurement; Energy barrier; Phase change materials; Phase change memory; Threshold voltage; Time measurement; Virtual reality; Voltage measurement

The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.