Relaxation Oscillation in GST-Based Phase Change Memory Devices
The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.
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Published in | 2009 IEEE International Memory Workshop pp. 1 - 2 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2009
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Subjects | |
Online Access | Get full text |
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