Relaxation Oscillation in GST-Based Phase Change Memory Devices

The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.

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Bibliographic Details
Published in2009 IEEE International Memory Workshop pp. 1 - 2
Main Authors Jackson, D.C.S., Nardone, M., Karpov, V., Karpov, I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
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Summary:The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.
ISBN:9781424437627
1424437628
ISSN:2159-483X
DOI:10.1109/IMW.2009.5090605