InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability

• Published in: 2008 20th International Conference on Indium Phosphide and Related Materials pp. 1 - 4
• Main Authors: Chtioui, M., Enard, A., Carpentier, D., Bernard, S., Rousseau, B., Lelarge, F., Pommereau, F., Achouche, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2008
• Subjects: 1dB compression; Bandwidth; Capacitance measurement; Dark current; high power photodiode; Indium gallium arsenide; Indium phosphide; Photoconductivity; photodiode; Photodiodes; series-resistance; Space charge; space-charge effect; Substrates; thermal dissipation; uni-traveling-carrier; Voltage

We compare two uni-traveling-carrier photodiodes for high power applications. Saturation current is increased from 62 mA to 90 mA at 20 GHz due to improved series-resistance and heat power dissipation. The associated 3 -dB bandwidth is shown to increase simultaneously from 30 GHz at 40 mA to 32 GHz...