InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability
We compare two uni-traveling-carrier photodiodes for high power applications. Saturation current is increased from 62 mA to 90 mA at 20 GHz due to improved series-resistance and heat power dissipation. The associated 3 -dB bandwidth is shown to increase simultaneously from 30 GHz at 40 mA to 32 GHz...
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Published in | 2008 20th International Conference on Indium Phosphide and Related Materials pp. 1 - 4 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2008
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Subjects | |
Online Access | Get full text |
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