Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction

The linearity and efficiency performance was studied for large periphery AlGaN/GaN HEMTs. Comparison was made between inherent linear device performance and device performance using digital pre-distortion (DPD) correction. Additionally, both drain voltage and current were optimized to provide high e...

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Bibliographic Details
Published in2006 IEEE MTT-S International Microwave Symposium Digest pp. 1327 - 1330
Main Authors Poulton, M.J., Leverich, W.K., Shealy, J.B., Vetury, R., Brown, J.D., Green, D.S., Gibb, S.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2006
Subjects
Aluminum gallium nitride
circuit optimization
code division multiple access
Distortion measurement
Gallium nitride
GaN
HEMTs
Intermodulation distortion
Linearity
MODFETs
Multiaccess communication
Power amplifiers
Semiconductor devices
Testing
WCDMA
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Summary:The linearity and efficiency performance was studied for large periphery AlGaN/GaN HEMTs. Comparison was made between inherent linear device performance and device performance using digital pre-distortion (DPD) correction. Additionally, both drain voltage and current were optimized to provide high efficiency for a specified linearity. Significant improvements in linear efficiency were achieved using the DPD correction with a best measured PAE of 43.5 %, at a Vd of 28 V, using two carrier W-CDMA
ISBN:9780780395411
0780395417
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2006.249493