Universal mobility modeling and its application to interface engineering for highly scaled MOSFETs based on first-principles calculation

• Published in: 2009 IEEE International Electron Devices Meeting (IEDM) pp. 1 - 4
• Main Authors: Ishihara, T., Matsushita, D., Kato, K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2009
• Subjects: Atomic measurements; Degradation; High K dielectric materials; Hydrogen; Interface states; Laboratories; Large scale integration; MOSFETs; Polarization; Scattering

We have constructed universal mobility modeling that can treat both the elastic and inelastic scattering due to the polarized dipole. We have confirmed the scheme for the case of the inversion layer mobility. We have performed the interface engineering to improve the mobility degradation due to the...