APA (7th ed.) Citation

Ishihara, T., Matsushita, D., & Kato, K. (2009, December). Universal mobility modeling and its application to interface engineering for highly scaled MOSFETs based on first-principles calculation. 2009 IEEE International Electron Devices Meeting (IEDM), 1-4. https://doi.org/10.1109/IEDM.2009.5424416

Chicago Style (17th ed.) Citation

Ishihara, T., D. Matsushita, and K. Kato. "Universal Mobility Modeling and Its Application to Interface Engineering for Highly Scaled MOSFETs Based on First-principles Calculation." 2009 IEEE International Electron Devices Meeting (IEDM) Dec. 2009: 1-4. https://doi.org/10.1109/IEDM.2009.5424416.

MLA (9th ed.) Citation

Ishihara, T., et al. "Universal Mobility Modeling and Its Application to Interface Engineering for Highly Scaled MOSFETs Based on First-principles Calculation." 2009 IEEE International Electron Devices Meeting (IEDM), Dec. 2009, pp. 1-4, https://doi.org/10.1109/IEDM.2009.5424416.