Enhanced Stimulated Raman Scattering in silicon nanocrystals embedded in silicon-rich nitride/silicon superlattice structures

In this paper, a significant enhancement of the gain coefficient in Raman amplifier using nanostructured silicon clusters embedded in Si-rich nitride/Silicon superlattice structures (SRN/Si-SLs) is experimentally demonstrated. The measured gain enhancement is approximately a factor four larger than...

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Bibliographic Details
Published inCLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference p. 1
Main Authors Sirleto, L., Ferrara, M.A., Rendina, I., Warga, J., Li, R., Negro, L.D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2009
Subjects
Absorption
Nanocrystals
Optical amplifiers
Optical devices
Optical materials
Raman scattering
Silicon
Stimulated emission
Superlattices
Wavelength division multiplexing
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Summary:In this paper, a significant enhancement of the gain coefficient in Raman amplifier using nanostructured silicon clusters embedded in Si-rich nitride/Silicon superlattice structures (SRN/Si-SLs) is experimentally demonstrated. The measured gain enhancement is approximately a factor four larger than the value (0.076 cm/MW) reported for bulk silicon.
ISBN:1424440793
9781424440795
DOI:10.1109/CLEOE-EQEC.2009.5196553