Effect of single HALO doped channel in Tunnel FETs: A 2-D modeling study - Syamal, B; Bose, C; Sarkar, C K; Mohankumar, N (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, 2010)
Keywords: Depletion Width; Halo Doping; Junctions; Semiconductor process modeling; Solid modeling; Solids; Surface Potential; Tunnel FETs; Tunneling; Tunneling Junction