Sub threshold analog &RF parameter extraction of graded channel gate stack DG-MOSFETs with high K material using NQS approach

• Published in: 2017 Devices for Integrated Circuit (DevIC) pp. 216 - 220
• Main Authors: Swain, Sanjit Kumar, Adak, Sarosij, Parija, Saradiya, Sarkar, Chandan Kumar
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2017
• Subjects: Analog &RF parameters; Doping profiles; GCGS-DGMOSFETs; High-k dielectric materials; High-K oxide materials; Logic gates; Non-Uniform Channel Doping; Performance evaluation; Radio frequency; SCEs effects; Semiconductor process modeling

In this paper we study the analog performance and also extract the RF parameters of Graded channel Gate stack (GCGS) DG MOSFET structure for different high K materials. A relative assessment was also carried out by using 2D Sentrausu TCAD simulator for different high-K oxide layers. This novel devic...