APA (7th ed.) Citation

Swain, S. K., Adak, S., Parija, S., & Sarkar, C. K. (2017, March). Sub threshold analog &RF parameter extraction of graded channel gate stack DG-MOSFETs with high K material using NQS approach. 2017 Devices for Integrated Circuit (DevIC), 216-220. https://doi.org/10.1109/DEVIC.2017.8073939

Chicago Style (17th ed.) Citation

Swain, Sanjit Kumar, Sarosij Adak, Saradiya Parija, and Chandan Kumar Sarkar. "Sub Threshold Analog &RF Parameter Extraction of Graded Channel Gate Stack DG-MOSFETs with High K Material Using NQS Approach." 2017 Devices for Integrated Circuit (DevIC) Mar. 2017: 216-220. https://doi.org/10.1109/DEVIC.2017.8073939.

MLA (9th ed.) Citation

Swain, Sanjit Kumar, et al. "Sub Threshold Analog &RF Parameter Extraction of Graded Channel Gate Stack DG-MOSFETs with High K Material Using NQS Approach." 2017 Devices for Integrated Circuit (DevIC), Mar. 2017, pp. 216-220, https://doi.org/10.1109/DEVIC.2017.8073939.