Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance

• Published in: 2017 Devices for Integrated Circuit (DevIC) pp. 401 - 406
• Main Authors: Rewari, Sonam, Nath, Vandana, Haldar, Subhasis, Deswal, S. S., Gupta, R. S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2017
• Subjects: Band to Band tunelling; Dielectrics; Double gate; Gallium arsenide; Gate All Around; Gate Induced Drain Leakage; Insulated Shallow Extension; Logic gates; Metals; MOSFET; Overlap; Transconductance; Tunneling

In this paper a Dual Metal Insulated Shallow Extension Gate All Around (DMISEGAA) MOSFET has been proposed to solve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET for improved analog performance. DMISEGAA MOSFET improves gate leakages by minimiz...