APA (7th ed.) Citation

Rewari, S., Nath, V., Haldar, S., Deswal, S. S., & Gupta, R. S. (2017, March). Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance. 2017 Devices for Integrated Circuit (DevIC), 401-406. https://doi.org/10.1109/DEVIC.2017.8073979

Chicago Style (17th ed.) Citation

Rewari, Sonam, Vandana Nath, Subhasis Haldar, S. S. Deswal, and R. S. Gupta. "Dual Metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to Reduce Gate Induced Drain Leakages (GIDL) for Improved Analog Performance." 2017 Devices for Integrated Circuit (DevIC) Mar. 2017: 401-406. https://doi.org/10.1109/DEVIC.2017.8073979.

MLA (9th ed.) Citation

Rewari, Sonam, et al. "Dual Metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to Reduce Gate Induced Drain Leakages (GIDL) for Improved Analog Performance." 2017 Devices for Integrated Circuit (DevIC), Mar. 2017, pp. 401-406, https://doi.org/10.1109/DEVIC.2017.8073979.