Prediction of noise transit time and noise correlation of SiGe HBTs

• Published in: 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) pp. 64 - 67
• Main Authors: Cheng, Peng, Shichijo, Hisashi
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.01.2018
• Subjects: Correlation; Heterojunction bipolar transistors; Integrated circuit modeling; noise correlation; Noise measurement; noise modeling; Noise transit time; SiGe HBTs; Silicon germanium; Temperature measurement
• DOI: 10.1109/SIRF.2018.8304231

This paper presents the prediction of noise transit time and noise correlation of SiGe HBTs over the temperature and biasing from the HICUM compact model without any measured noise data. For SiGe HBTs, the noise correlation is critical for noise characterization as it effects the full noise properties of the transistor. To predict the noise correlation, it is necessary to determine the noise transit time. This paper discusses the extraction of the noise transit time based on the HICUM model. The extracted noise transit time is validated by the measured result, which is determined by fitting the NFmin of a sample SiGe HBT between Y-parameter noise calculation method and tuner-based noise measurement. It was found that the noise transit time is independent of frequency but dependent on temperature and biasing. Also, the results indicate that the extracted noise transit time based on HICUM model can predict the noise correlation over the temperature and biasing.