Analysis of hot carrier-induced degradation of Horizontal Current Bipolar Transistor (HCBT)

• Published in: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) pp. 77 - 82
• Main Authors: Zilak, J., Koricic, M., Suligoj, T.
• Format: Conference Proceeding
• Language: English
• Published: Croatian Society MIPRO 01.05.2017
• Subjects: Degradation; Electric fields; Electron traps; Hot carriers; Reliability; Stress

The relative contribution of the hot electrons and hot holes to the reliability degradation of the Horizontal Current Bipolar Transistor (HCBT) is investigated by TCAD simulations. The base current (IB) degradation, obtained by the reverse-bias emitter-base (EB) and mixed-mode stress measurements, i...