Kink Effect Phenomenon in I-V Characteristic of Multiple-Gated AlGaAs/InGaAs HEMTs Device

• Published in: 2007 Asia-Pacific Microwave Conference pp. 1 - 4
• Main Authors: Osman, M.N., Awang, Z., Rahim, A.I.A., Yaakob, S., Yahya, M.R., Mat, A.F.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2007
• Subjects: Current measurement; Current-voltage characteristic; Electric variables measurement; Electrons; Fingers; HEMTs; Impact ionization; Indium gallium arsenide; Kink effect; MODFETs; Multiple-gated HEMT; Performance evaluation; Voltage

The electrical measurement to obtain output current characteristic of 0.2 mum AlGaAs / InGaAs HEMTs device has been performed within specific drain and gate bias voltages. The samples which consist a few layouts were designed based on different number of gate fingers to observe the effect towards th...