APA (7th ed.) Citation

Osman, M., Awang, Z., Rahim, A., Yaakob, S., Yahya, M., & Mat, A. (2007, December). Kink Effect Phenomenon in I-V Characteristic of Multiple-Gated AlGaAs/InGaAs HEMTs Device. 2007 Asia-Pacific Microwave Conference, 1-4. https://doi.org/10.1109/APMC.2007.4554728

Chicago Style (17th ed.) Citation

Osman, M.N, Z. Awang, A.I.A Rahim, S. Yaakob, M.R Yahya, and A.F.A Mat. "Kink Effect Phenomenon in I-V Characteristic of Multiple-Gated AlGaAs/InGaAs HEMTs Device." 2007 Asia-Pacific Microwave Conference Dec. 2007: 1-4. https://doi.org/10.1109/APMC.2007.4554728.

MLA (9th ed.) Citation

Osman, M.N, et al. "Kink Effect Phenomenon in I-V Characteristic of Multiple-Gated AlGaAs/InGaAs HEMTs Device." 2007 Asia-Pacific Microwave Conference, Dec. 2007, pp. 1-4, https://doi.org/10.1109/APMC.2007.4554728.